Semiconductor device

ABSTRACT

An n + -emitter layer arranged under an emitter electrode is formed of convex portions arranged at predetermined intervals and a main body coupled to the convex portions. A convex portion region is in contact with the emitter electrode, and a p + -layer doped more heavily than a p-base layer is arranged at least below the emitter layer. In a power transistor of a lateral structure, a latch-up immunity of a parasitic thyristor can be improved, and a turn-off time can be reduced.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of and claims the benefit of priorityunder 35 U.S.C. §120 from U.S. Ser. No. 11/550,189, filed Oct. 17, 2006,the entire content of which is incorporated herein by reference, andclaims the benefit of priority under 35 U.S.C. §119 of JapaneseApplication No. 2006-188339, filed Jul. 7, 2006.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor power device, andparticularly to a semiconductor device such as an Insulated Gate BipolarTransistor (IGBT) or a power MOSFET (insulated gate field effecttransistor). More particularly, the invention relates to a structure forimproving a driving current quantity, a latch-up immunity and turn-offcharacteristics of a power device.

2. Description of the Background Art

Power devices have been used in the fields of converting and controllingelectric powers. Such power devices include a MOS gate device receivinga voltage at an insulated gate for performing a switching operation. MOSgate devices include an IGBT (Insulated Gate Bipolar Transistor) and aMOSFET (insulated gate field effect transistor). A semiconductor switchof such power device is required to have characteristics of fastoperation (fast switching operation) as well as large current drivingand high breakdown voltage.

A reference 1 (Japanese Patent Laying-Open No. 07-058320) discloses thefollowing structure for the purpose of reducing a turn-off time of theIGBT to increase an operation frequency. Reference 1 discloses, as aconventional structure, the following structure. A p-type base contactlayer is arranged surrounding an n-type emitter layer, and is contactedwith a p-type base layer. The p-type base contact layer and the n-typeemitter layer are both coupled to an emitter electrode. The p-type basecontact layer discharges minority carriers (holes) to the emitterelectrode during turn-off. An n-type buffer layer is formed under ap-type collector layer. This buffer layer prevents the discharging ofminority carriers to an n⁻-type drift layer when majority carriers aredischarged from the collector layer to a collector terminal duringturn-off. In the case of employing the n-type buffer layer, if abuffering effect of the buffer layer is made so high, the efficiency ofinjection of the minority carriers into the drift layer during turn-onis lowered to lower a conductivity modulation effect, leading to anincreased on-resistance and therefore an increased on-voltage. As astructure for avoiding such disadvantage, Reference 1 discloses ashorted collector structure. In this shorted collector structure, ann-type collector short layer is arranged surrounding an outer perimeterof a p-type collector. Both the p-type collector layer and the n-typecollector short layer are commonly coupled to a collector electrode. Inthis collector short structure, majority carriers flow into thecollector short layer during turn-off, but the collector short layerabsorbs the minority carriers and thereby suppresses generation of theminority carriers so that the turn-off time is reduced.

The IGBT generally includes a p-type collector layer, n-type bufferlayer, n⁻-type drift layer, p-type base layer and n-type emitter layer.This npn structure accompanies a parasitic thyristor. A latch-upphenomenon may be caused in which the parasitic thyristor is turned onby a voltage drop at a base region of the IGBTeference 2 (JapanesePatent National Publication No. 09-503626: International PatentPublication WO 95/24055) discloses a structure aimed to improve thislatch-up immunity.

In Reference 2, a heavily doped p⁺-type region is arranged beneath ann⁺-type source layer in a p-type base region formed in an n⁻-type driftlayer. The heavily doped p⁺-type region serves to reduce a resistancevalue of a p-type base region, thereby to reduce a voltage drop at ajunction between the source and base regions to improve latch-upimmunity.

Reference 3 (Japanese Patent Laying-Open No. 2000-286416) discloses astructure aiming to increase an on-current and to improve the latch-upimmunity. In Reference 3, a collector layer, an emitter layer and a gateelectrode are each formed into a ring shape. The emitter layer (sourcelayer) has a gear-like form having convex and concave portions, or isformed of island-like portions each isolated from the others. A baseresistance of a portion under the emitter region is reduced, and a holecurrent is radially discharged from a collector layer formed at acentral portion to reduce the current density of the hole current, forimproving a latch-up immunity.

Reference 1 has pointed out the following problem occurring when theshorted collector structure is applied to a lateral IGBT structure.During the turn-off, majority carriers pass under the p-type collectorlayer, and flow into the n-type collector short layer, and thereforeinto the p-type collector layer also. Accordingly, minority carriers anincreased quantity are injected into the n⁻-type drift layer. Foreliminating the problem of the shorted collector structure in thelateral IGBT structure, Reference 1 places an MOS transistor (insulatedgate field effect transistor) having a sub-gate in the p-type collectorlayer, and couples the collector layer to a collector charge extractionlayer via the sub-gate MOS transistor. The charge extraction layer iscoupled to the collector terminal. In the sub-gate structure, the n-typesource layer of the MOSFET is arranged adjacent to the p-type collectorlayer, and these layers are coupled by the common electrode, and therebyn-type carriers in the n-type source layer are converted into p-typecarriers in the p-type collector layer. During the turn-off, the MOStransistor of the sub-gate structure is kept off to keep the p-typecollector layer in this sub-gate in an electrically floating state, andthe p-type collector layer is isolated from the charge extraction layer.Majority carriers (electrons) are pulled out to the collector terminalvia the charge extraction layer. Meanwhile, the p-type collector layerand the underlying p-well (p-base) are in the electrically floatingstate, and a pn junction between the well and the drift layer is kept ina reversely biased state (not exceeding a built-in voltage), andsuppresses injection of minority carriers.

However, tin the structure disclosed in Reference 1, an additionalcircuit is required for controlling a potential of the sub-gateseparately from the gate (main gate) of the IGBT, which increases ascale of the control circuitry. In the IGBT element, the sub-gate andthe main gate terminal are separately provided, which increases a layoutarea. In the structure disclosed in Reference 1, the majority carriers(electrons) pass under the p-type base layer, and are absorbed into thecharge extraction layer. However, no consideration is given to alatch-up phenomenon by a parasitic thyristor between the p-typecollector layer, underlying p-well, n⁻-type drift layer and n-typeemitter layer.

In the structure disclosed in Reference 2, it is intended to reduce theresistance value of the p-type base region by the heavily doped p⁺-typeregion arranged beneath the n-type source layer. However, Reference 2discusses only a vertical device structure, and no consideration isgiven to application to a lateral device structure. In addition,Reference 2 considers a structure for avoiding of latch-up due to aparasitic thyristor in the vertical device structure, but does notconsider a structure for increasing a driving current.

In the structure disclosed in Reference 3, the emitter region is formedin a gear-like shape or is formed of separate island-like portions foravoiding the latch-up, but there is room for improvement for increasingthe driving current and reducing the turn-off time.

SUMMARY OF THE INVENTION

An object of the invention is to provide a semiconductor device that canincrease a driving current quantity, can reduce a turn-off time and canimprove a latch-up immunity of a parasitic thyristor.

A semiconductor device according to an aspect of the invention includesa semiconductor substrate; a semiconductor region formed on thesemiconductor substrate; a first semiconductor layer region arranged ata surface of the semiconductor region and coupled to a first electrode;a second semiconductor layer region of a ring-shaped form arranged atthe semiconductor region, spaced from the first semiconductor layerregion, surrounding the first semiconductor layer region and having aconductivity type different from that of the semiconductor region; athird semiconductor layer region different in conductivity type from thesecond semiconductor layer region having a main body arranged in thesecond semiconductor layer region and having a ring-shaped continuousform, and a plurality of convex regions adjacent to the main body,extending away from the first semiconductor layer region, coupled to asecond electrode, arranged at predetermined internals and each having awidth smaller than the predetermined interval; a heavily dopedsemiconductor layer region arranged in the second semiconductor layerregion, located at least under the third semiconductor layer region,doped more heavily than the second semiconductor layer region and havingthe same conductivity type as the second semiconductor layer region; anda gate electrode layer forming a channel at a surface of the secondsemiconductor layer region for transferring charges between the firstand third semiconductor layer regions.

A semiconductor device according to a second aspect of the inventionincludes a semiconductor substrate; a semiconductor region formed on thesemiconductor substrate; a first semiconductor layer region arranged atthe semiconductor region and coupled to a first electrode; a secondsemiconductor layer region of a ring-shaped form arranged at thesemiconductor region, spaced from the first semiconductor layer region,surrounding the semiconductor layer region and different in conductivitytype from the semiconductor region; a third semiconductor layer regionhaving a plurality of unit regions arranged at the second semiconductorlayer region, spaced from each other, arranged at predeterminedintervals and each having a rectangle-like form and a width larger thanthe predetermined interval, and different in conductivity type from thesecond semiconductor layer region; a heavily doped semiconductor layerregion arranged in the second semiconductor layer region, located atleast under the third semiconductor layer region, doped more heavilythan the second semiconductor layer region and being the same inconductivity type as the second semiconductor layer region; and a gateelectrode layer forming a channel at a surface of the secondsemiconductor layer region for transferring charges between the firstand third semiconductor layer regions.

In the semiconductor device according to the first aspect of theinvention, the third semiconductor layer region corresponding to anemitter layer region in one embodiment of the invention has a gear-likeform, and concave regions of the third semiconductor layer region have areduced width. Therefore, it is possible to decrease a width of thesecond semiconductor layer region immediately under the thirdsemiconductor layer region in a parasitic bipolar transistor that isformed of the semiconductor region (drift layer), the secondsemiconductor layer region (base region in one embodiment) and the thirdsemiconductor layer region (emitter layer in one embodiment).Accordingly, the resistance of the second semiconductor layer region canbe reduced. Thus, a parasitic bipolar transistor operation issuppressed, and therefore latch-up of a parasitic thyristor can besuppressed. The heavily doped semiconductor layer region is arrangedunder the third semiconductor layer region. Likewise, the resistance ofthe second semiconductor layer region immediately under the thirdsemiconductor layer region can be reduced, so that the parasitic bipolartransistor operation can be suppressed, and the latch-up immunity can beimproved.

The main body portion is formed continuously, which does not reduce awidth of a channel formed with respect to the third semiconductor layerregion that is the emitter in one embodiment. Collector-emitter current(ICE) characteristics or source-drain current characteristics, when acollector-emitter voltage or a source-drain voltage is applied under thecondition that a certain gate-emitter or gate-source voltage (VGE orVGS) is applied, do not deteriorate. Since the channel region has theannular or the ring-shaped form, the channel region can made large, toconduct a large current.

Since an arrangement pitch of the convex portions is larger than thewidth of the convex portions, a gate electrode interconnection can bereadily led out.

According to the semiconductor device of the second aspect of theinvention, the third semiconductor layer region corresponding to theemitter layer region in one embodiment is formed of the unit regionseach having the island-like form and spaced from each other, and theheavily doped semiconductor layer region is arranged under the unitregions. Accordingly, the resistance of the second semiconductor layerregion immediately under the third semiconductor layer region can bereduced in the parasitic bipolar transistor that is formed of thesemiconductor region (drift layer), the second semiconductor layerregion (base region in one embodiment) and the third semiconductor layerregion (emitter region in one embodiment). This can suppress theparasitic bipolar transistor operation, and accordingly can suppress thelatch-up of the parasitic thyristor.

In a region between the unit regions, the heavily doped semiconductorlayer region can pass minority carriers so that the minority carrierscan be efficiently absorbed, and the turn-off time can be reduced. Theheavily doped semiconductor layer region is arranged under the thirdsemiconductor layer region, to reduce the resistance of the secondsemiconductor layer region immediately under the third semiconductorlayer region, so that the parasitic bipolar transistor operation can besuppressed, and the latch-up immunity can be improved.

The unit regions are separated from each other in the thirdsemiconductor layer region that is the emitter in one embodiment, butthe width of the unit region is smaller than the distance between theunit regions. A width of a channel formed for the whole of the thirdsemiconductor layer region is not substantially reduced.Collector-emitter current (ICE) characteristics or source-drain currentcharacteristics, when a collector-emitter voltage or a source-drainvoltage is applied under the condition that a certain gate-emitter orgate-source voltage (VGE or VGS) is applied, do not deteriorate.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically shows a surface layout of a lateral IGBT accordingto a first embodiment of the invention.

FIGS. 2, 3 and 4 schematically show sectional structures taken alonglines L2-L2, L3-L3 and L4-L4 in FIG. 1, respectively.

FIG. 5 shows an electrically equivalent circuit of a parasitic thyristorof the lateral IGBT shown in FIGS. 1 to 4.

FIG. 6A shows, on an enlarged scale, forms of an emitter layer and anemitter contact region, and FIG. 6B shows, on an enlarged scale, astructure of the emitter layer.

FIG. 7 shows an example of an arrangement of a gate electrode lead-outline in the structure of the emitter layer shown in FIG. 6A.

FIG. 8 schematically shows a planar layout of the gate electrodelead-out line shown in FIG. 7 and various electrodes.

FIG. 9 schematically shows a planar layout of a lateral IGBT of a firstmodification of the first embodiment of the invention.

FIGS. 10 and 11 schematically show cross sectional structures takenalong lines L10-L10 and L11-L11 shown in FIG. 9, respectively.

FIG. 12 schematically shows a cross sectional structure of a lateralIGBT of a second modification of the first embodiment of the invention.

FIG. 13 schematically shows a cross sectional structure of an emitterregion of the lateral IGBT of the second modification of the firstembodiment of the invention.

FIGS. 14 and 15 schematically show cross sectional structures of anemitter region of a lateral IGBT of a third modification of the firstembodiment of the invention, respectively.

FIG. 16 schematically shows a surface layout of a lateral IGBT of asecond embodiment of the invention.

FIGS. 17 and 18 schematically show cross sectional structures takenalong lines L17-L17 and L18-L18 in FIG. 16, respectively.

FIG. 19 schematically shows a cross sectional structure of an emitterregion of a lateral IGBT of a first modification of the secondembodiment of the invention.

FIG. 20 schematically shows a cross sectional structure of an emitterregion of a lateral IGBT of a first modification of the secondembodiment of the invention.

FIG. 21 schematically shows a cross sectional structure of an emitterregion of a lateral IGBT according to a second modification of thesecond embodiment of the invention.

FIG. 22 schematically shows a cross sectional structure of the emitterregion of the second modification of the second embodiment of theinvention.

FIG. 23 schematically shows a cross sectional structure of the emitterregion of the lateral IGBT of a third modification of the secondembodiment of the invention.

FIG. 24 schematically shows a cross sectional structure of the emitterregion of the third modification of the second embodiment of theinvention.

FIG. 25 schematically shows a surface layout of a lateral IGBT accordingto a third embodiment of the invention.

FIGS. 26 and 27 schematically show cross sectional structures takenalong lines L26-L26 and L27-L27 in FIG. 25, respectively.

FIGS. 28 and 29 schematically show cross sectional structures of anemitter region of a lateral IGBT of a first modification of the thirdembodiment of the invention, respectively.

FIGS. 30 and 31 schematically show cross sectional structures of anemitter region of a lateral IGBT of a second modification of the thirdembodiment of the invention, respectively.

FIGS. 32 and 33 schematically show cross sectional structures of anemitter region of a lateral IGBT of a third modification of the thirdembodiment of the invention, respectively.

FIG. 34 schematically shows a layout of a surface of a lateral IGBT of afourth embodiment of the invention.

FIGS. 35 and 36 schematically show cross sectional structures takenalong lines L35-L35 and L36-L36 in FIG. 34, respectively.

FIGS. 37 and 38 schematically show cross sectional structures of anemitter region of a lateral IGBT of a first modification of the fourthembodiment of the invention, respectively.

FIG. 39 schematically shows a cross sectional structure of an emitterregion of a lateral IGBT of a second modification of the fourthembodiment of the invention.

FIG. 40 schematically shows a cross sectional structure of the lateralIGBT of the second modification of the fourth embodiment of theinvention.

FIG. 41 schematically shows a cross sectional structure of an emitterregion of a lateral IGBT of a third modification of the fourthembodiment of the invention.

FIG. 42 schematically shows a cross sectional structure of the lateralIGBT of the third modification of the fourth embodiment of theinvention.

FIG. 43 schematically shows a layout of a surface of a lateral IGBTaccording to a fifth embodiment of the invention.

FIG. 44 schematically shows a cross sectional structure taken along aline L44-L44 in

FIG. 43.

FIG. 45 shows an example of an arrangement of cells of an IGBT accordingto a sixth embodiment of the invention.

FIG. 46 shows another example of the arrangement of cells of the IGBTaccording to the sixth embodiment of the invention.

FIG. 47 schematically shows, for comparison, a layout of a surface of aconventional lateral IGBT having an elliptic structure.

FIG. 48 shows a channel length of the IGBT according to the sixthembodiment of the invention together with channel regions of the IGBTshown in FIG. 47.

FIGS. 49 and 50 represent switching characteristics of the IGBTs shownin FIGS. 47 and 46, respectively.

FIG. 51 schematically shows a cross sectional structure a lateral IGBTaccording to a seventh embodiment of the invention.

FIG. 52 represents switching characteristics of the lateral IGBTs shownin FIGS. 51 and 2.

FIG. 53 represents distribution of holes and electrons, and a depletionlayer region boundary in the lateral IGBT shown in FIG. 2.

FIG. 54 represents a distribution of holes in the lateral IGBT (FIG. 2)of a junction isolation structure.

FIG. 55 represents a concentration distribution of electrons, holes andan equilibrium state in the lateral IGBT of the junction isolationstructure shown in FIG. 2.

FIG. 56 represents a distribution of current and a potential and adepletion layer region boundary in the lateral IGBT of a dielectricisolation structure shown in FIG. 51.

FIG. 57 represents a distribution of holes in the lateral IGBT of thedielectric isolation structure shown in FIG. 51.

FIG. 58 represents distribution of electron and holes and ahole/electron concentration distribution in an equilibrium state betweenthe collector and emitter in the lateral IGBT of the junction isolationstructure shown in FIG. 51.

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

FIG. 1 schematically shows a planar layout of a lateral n-channel IGBTaccording to a first embodiment of the invention. FIG. 1 does not showinsulating films, interconnection lines, electrodes and the like, andfurther does not show a heavily doped semiconductor region which is oneof characteristic features of the invention.

In FIG. 1, an IGBT 1 includes a p-type collector layer (firstsemiconductor layer region) 2 formed at a central portion in a circularform, an n-type buffer layer (semiconductor region) 3 formed surroundingcollector layer 2, an n⁻-type drift layer (semiconductor region) 4formed in a ring-shaped form outside buffer layer 3, an annular p-typebase layer (second semiconductor region) 5 formed in a ring-shaped formoutside n⁻-type drift layer 4, and an n⁺-emitter layer (thirdsemiconductor region) 6 formed in p-type base layer 5.

Emitter layer 6 includes a main body 6 a formed into a continuous,ring-shaped form and convex portions 6 b that are arranged atpredetermined intervals, are coupled to main body 6 a and protrude awayfrom collector layer 2. N⁺-emitter layer 6 is formed having partiallyincreased radial length with the convex portions, to shorten the lengthof p-type base layer 5 located under the emitter layer, for reducing thebase resistance.

In p-type base layer 5, a channel formation region 8 in which a channelis formed by a voltage on a not-shown gate electrode is arranged betweenemitter layer 6 and n⁻-drift layer 4. An emitter electrode contactregion 7 of a ring-shaped form is arranged at a central portion ofp-type base layer 5 in the region of emitter layer 6. An emitterelectrode electrically coupled to convex portion 6 b of emitter layer 6is arranged in emitter electrode contact region 7.

Since emitter layer 6 has main body 6 a formed continuously in aring-shaped form, the channel formed in channel formation region 8 isformed continuously in the ring-shaped form.

N-type layer (buffer layer) 3 formed surrounding p-type collector layer2 absorbs minority carriers transferred from p-type collector layer 2.

FIG. 2 schematically shows a cross sectional structure of IGBT 1 takenalong a line L2-L2 shown in FIG. 1. In FIG. 2, IGBT 1 has n⁻-type driftlayer 4 formed on a surface of a p-type semiconductor substrate(semiconductor substrate) 10. N-type layer (well region) 3 is formed ata central portion (left end in FIG. 2) of a surface of n⁻-type layer(drift layer) 4, and p-type collector layer 2 is formed at the surfaceof n-type (buffer) layer 3. P-type collector layer 2 is electricallycoupled to a collector electrode 13, which in turn is coupled to acollector terminal (not shown) via a collector electrode line 14.

A first insulating film 11 is formed under collector electrode andinterconnection line 14 and at the surface of n⁻-layer 4, and a secondinsulating film 12 serving as a passivation film is formed on firstinsulating film 11. An interlayer insulating film is provided betweencollector electrode 13 and n-buffer layer 3.

In an emitter portion shown on the right side of FIG. 2, a gateinterconnection line 16 is formed on first insulating film 11. Gateinterconnection line 16 includes a gate electrode and interconnectionline portion 16 a formed on n⁻-layer 4 with a gate insulating film 15interposed in between. Gate interconnection line 16 is electricallycoupled to a gate electrode 17. In gate interconnection line 16, gateelectrode interconnection portion 16 a has a ring-shaped form, so thataccording to a voltage applied to the gate electrode 17, a channel canbe formed over a whole channel formation region 8 at the surface ofp-type base layer 5.

A p⁺-layer 20 that is doped more heavily than p-type base layer 5 isformed at the surface of p-type base layer 5, being deeper than emitterlayer 6. N⁺-emitter layer 6 is formed on p⁺-layer 20. An emitterelectrode 21 is formed to be in contact with both p⁺-layer 20 andn⁺-emitter layer 6. An interlayer insulating film 19 is provided betweengate electrode 17 and emitter electrode 21 for isolating them from eachother.

Heavily doped p⁺-layer 20 is arranged at the bottom of n⁺-emitter layer6, and therefore the base layer located at the bottom of n⁺-emitterlayer 6 has a reduced resistance value to reduce a voltage dropthereacross.

FIG. 3 schematically shows a cross sectional structure of IGBT 1 takenalong a line L3-L3 in FIG. 1. The cross sectional structure of IGBT 1shown in FIG. 3 is the same as that of the portion neighboring theemitter region of the IGBT shown in FIG. 2. Corresponding portions areallotted with the same reference numerals, and detailed descriptionthereof will not be repeated. However, first and second insulating films11 and 12 shown in FIG. 2 are not particularly appended the referencenumerals in FIG. 3.

As shown in FIG. 3, n⁺-emitter layer 6 extends from channel formationregion 8 to a portion under emitter electrode 21 (the convex portionsare coupled to emitter electrode 21). Emitter electrode 21 is alsocoupled to p⁺-layer 20 formed under n⁺-emitter layer 6. Therefore, acontact resistance between emitter electrode 21 and the base layer canbe reduced as compared with the case where p-type base layer 5 isdirectly coupled to emitter electrode 21. During turn-off or in thesteady state, holes HL flow from p-base layer 5 into emitter electrode21 via p⁺-layer 20. In this operation, the resistance value in p⁺-layer20 is small, and the voltage drop of p-type base layer 5 undern⁺-emitter layer 6 is small. Therefore, it is possible to prevent p-typebase layer 5 and n⁺-emitter layer 6 from being forwardly biased andaccordingly to prevent turn-on of a parasitic npn bipolar transistor.Specifically, owing to the provision of p⁺-layer 20, holes HL can flowwithout stagnation immediately under n⁺-emitter layer 6 into emitterelectrode 21 so that the holes of minority carriers can be dischargedrapidly. In other words, through the reduction in contact resistance ofbase layer 5 (p⁺-layer 20) with respect to emitter electrode 21, thebase resistance of the p-base region immediately under n⁺-emitter layer6 can be resultantly reduced.

FIG. 4 schematically shows a cross sectional structure of IGBT 1 takenalong a line L4-L4 in FIG. 1. In the region of IGBT 1 shown in FIG. 4,at n⁺-emitter layer 6, there is provided main body 6 a, but there is notprovided convex portions 6 b. Therefore, emitter electrode 21 is incontact with only p⁺-layer 20. Other structure in the cross sectionalstructure shown in FIG. 4 is the same as that in FIG. 3. Correspondingportions are assigned the same reference numerals, and descriptionthereof is not repeated.

As shown in FIG. 4, main body 6 a is short in a radial direction at theportion where convex portion 6 b is no provided in n⁺-emitter layer 6.In this region, therefore, the base resistance under n⁺-emitter layer 6is even smaller, and holes HL are discharged to emitter electrode 21 viap⁺-layer 20 of a small resistance without being stagnated. Thereby, theparasitic npn bipolar transistor operation can be suppressed moreeffectively, and therefore the latch-up immunity of the parasiticthyristor can be improved during the turn-off of IGBT 1 and during theon state in the steady state.

FIG. 5 shows an electrically equivalent circuit of the parasiticthyristor of lateral IGBT 1 shown in FIGS. 1 to 4. In FIG. 5, theparasitic thyristor includes a pnp bipolar transistor TR1 and an npnbipolar transistor TR2. Pnp bipolar transistor TR1 has an emitter formedof p-type collector layer 2, a base formed of n⁺- and n⁻-layers 3 and 4,and a collector formed of p-base layer 5 and p⁺-layer 20. Npn bipolartransistor TR2 has a collector formed of n⁺- and n⁻-layers 3 and 4, anemitter formed of n⁺-emitter layer 6 and a base formed of p-base layer 5and p⁺-layer 20. A base resistance R is present in a base layer ofbipolar transistor TR2.

The emitter of parasitic bipolar transistor TR1 is coupled to collectorelectrode 13, and the emitter and base of parasitic bipolar transistorTR2 are coupled to emitter electrode 21.

Since p⁺-layer 20 is employed, and n⁺-emitter layer 6 has a reducedradial length, base resistance R can be reduced. Accordingly, thebase-emitter voltage of parasitic bipolar transistor TR2 can beprevented from exceeding the built-in voltage, and parasitic bipolartransistor TR2 is prevented from being turned on. Thereby, the latch-upimmunity of the parasitic thyristor can be improved.

Although emitter layer 6 has a periphery formed into a gear-like shapehaving convex and concave portions, has main body 6 a at its innerportion formed continuously, to provide continuous channel formationregion 8. Since main body 6 a of emitter region 6 is formed into aring-shaped form, the channel is also formed continuously along thecircumferential direction of emitter layer 6, and the channel width canbe made sufficiently large. Therefore, it is possible to suppressdeterioration of characteristics of a collector-emitter current ICE,when a collector-emitter voltage VC is applied in the state where acertain gate-emitter voltage VGE is applied, and a large current can bedriven.

FIG. 6A specifically shows an emitter contact region for n⁺-emitterlayer 6 in the planar layout shown in FIG. 1. N⁺-emitter layer 6includes main body 6 a of a continuous and ring-shaped form, and convexportions 6 b spaced from each other by a predetermined distance. Convexportions 6 b are coupled to main body 6 a. An emitter contact region 25partially overlapping with convex portion 6 b is formed along the outerperiphery of main body 6 a. In emitter electrode contact region 7,emitter electrode (21) is formed and electrically connected tounderlying convex portions 6 b and p ⁺-layer 20 (not shown in FIG. 6A).

Therefore, convex portions 6 b are used in emitter electrode contactregion 7 as regions for making electric contact with n⁺-emitter layer 6,and thereby it is possible to reduce a length of the p-type base layerunder n⁺-emitter layer 6.

FIG. 6B shows, on an enlarged scale, a structure of a part of n⁺-emitterlayer 6 shown in FIG. 6A. In n⁺-emitter layer 6, convex portions 6 beach having a width W2 are formed along the outer periphery of main body6 a, and are aligned to each other in the circumferential direction witha predetermined pitch (interval) W1. Pitch W1 of arrangement of convexportions 6 b is significantly larger than width W2 of convex portion 6 b(W1>W2). By arranging convex portions 6 b of the n⁺-emitter layer atsufficient intervals, it is possible to suppress sufficiently theincrease in a width of n⁺-emitter layer 6 in the radial direction andthereby to reduce the base resistance. In addition, pitch W1sufficiently larger than width W2 of convex portion 6 b can provide thefollowing advantage.

FIG. 7 shows, on an enlarge scale, the planar layout of the n⁺-emitterlayer, emitter electrode and gate electrode lead-out line. As shown inFIG. 7, n⁺-emitter layer 6 includes main body 6 a of the ring-shaped,continuous form, and convex portions 6 b adjacent to main body 6 a andarranged at predetermined pitches (W1). Electrical contact is madebetween convex portions 6 b and an emitter electrode 30 (21). Emitterelectrode 30 corresponds to emitter electrode 21 shown in FIG. 2, has aring-shaped form and is arranged along emitter electrode contact region7 shown in FIG. 1. A gate electrode lead-out line 32 is arranged betweenadjacent convex portions 6 b.

Emitter electrode 30 is cut off in a region between convex portions 6 bwhere gate electrode lead-out line 32 is arranged. Therefore, main body6 a of n⁺-emitter layer 6 can continuously extend under gate electrodelead-out line 32, and emitter electrode 21 (30) can be in electricalcontact with n⁺-emitter layer 6 via convex portions 6 b. Thereby, it isnot necessary to separate off emitter layer 6 at the region where gateelectrode lead-out line 32 is arranged. Since n⁺-emitter layer main body6 a is formed extending continuously, the channel formation region canalso made extending continuously, and the reduction in channel width ofthe IGBT can be prevented.

FIG. 8 schematically shows a planar layout of the emitter and gateelectrodes of IGBT 1. As shown in FIG. 8, IGBT 1 includes channelformation region 8 arranged along and inside p-base layer 5. Gateelectrode 17 (gate interconnections including gate electrodeinterconnection lines 16 and 19) is arranged in the ring-shaped forminside channel formation 8. Gate electrode 17 is arranged surroundingn-buffer layer 3 and p-collector layer 2 formed inside.

N⁺-emitter layer 6 that has main body 6 a formed in a ring-shaped,continuous form and convex portions 6 b coupled to main body 6 a isarranged outside and along channel formation region 8. Emitter electrode30 (emitter electrode contact region 7) is formed at the surface ofp-base layer 5. Emitter electrode 30 is arranged partially overlappingwith convex portions 6 b of emitter layer 6, and has a discontinuousregion located between convex portions 6 b. Gate electrode lead-out line32 is arranged in the discontinuous region of emitter electrode 30, andis coupled at its inner portion to channel gate electrode 17 of thering-shaped form.

As shown in FIG. 8, n⁺-emitter layer 6 has a continuous form, and iselectrically connected to emitter electrode 30. Therefore, the channelinside n⁺-emitter layer 6 can be formed continuously in channelformation region 8, and reduction of the channel width can besuppressed.

In FIG. 8, emitter electrode 30 has one discontinuous region, where gateelectrode lead-out line 32 is arranged. However, emitter electrode 30may be cut off at a plurality of portions, and gate electrode lead-outline 32 may be arranged at each of the cut-off portions. It is merelyrequired that all the divided emitter electrodes 30 are commonly coupledto the emitter electrode lead-out interconnection line (emitterterminal).

As described above, the width (W1) in the circumferential direction ofconvex portion 6 b is smaller than the pitch (W2) in the circumferentialdirection of convex portions 6 b, whereby gate electrode lead-out line32 can be arranged with a sufficient margin Thereby, the characteristicsof collector-emitter current ICE when collector-emitter voltage VC isapplied under the condition that a certain gate-emitter voltage VGE isapplied, can be prevented from being deteriorated.

The description has been made on the n-channel IGBT. However, even witha lateral p-channel IGBT, similar effects can be achieved as in the nchannel lateral IGBT.

In the lateral p-channel IGBT, respective regions have the conductivitytypes opposite to those in the n-channel IGBT, and an n-base layer has aheavily doped semiconductor region being formed adjacent to a p-emitterregion and deeper than the emitter layer.

[First Modification]

FIG. 9 schematically shows a planar layout of the IGBT of a firstmodification of the first embodiment of the invention. FIG. 9 does notshow the insulating films, electrodes and interconnections, either. Theplanar layout shown in FIG. 9 differs from the planar layout of IGBT 1shown in FIG. 1 in the following points. Inside p-type base layer 5, aheavily doped p⁺-layer 35 of a ring-shaped form is arranged, which islocated under n⁺-emitter layer 6, and has an outer periphery aligned totip ends of convex portions 6 b of emitter layer 6. In the planar layoutshown in FIG. 9, other structures are the same as those in the planarlayout shown in FIG. 1. Corresponding portions are allotted with thesame reference numerals, and description thereof is not repeated.

FIG. 10 schematically shows a cross sectional structure taken along aline L10-L10 in FIG. 9. In FIG. 10, p⁺-layer 35 is formed undern⁺-emitter layer 6 (6 a and 6 b) in p-base layer 5 with its end alignedto the end of n⁺-emitter layer. Other structures in the sectionalstructure shown in FIG. 10 are the same as those in the cross sectionalstructure shown in FIG. 3. Corresponding portions are allotted with thesame reference numerals, and description thereof is not repeated. Inthis region, therefore, emitter electrode 21 is electrically coupled top-type base layer 5 and to n⁺-emitter layer 6.

FIG. 11 schematically shows a cross sectional structure taken along aline L11-L11 shown in FIG. 9. In the cross sectional structure shown inFIG. 11, n⁺-emitter layer 6 has main body 6 a, but does not have aconvex portion (6 b). In this region, heavily doped p⁺-layer 35 iscoupled to emitter electrode 21.

As shown in FIGS. 9 to 11, at the concave regions of the emitter layerwhere p⁺-layer 35 is arranged under n⁺-emitter layer 6 in p-base layer 5and no concave portions 6 b are provided, emitter electrode 21 iselectrically connected to the heavily doped n⁺-region. Thus, theresistance of p-base layer 5 can be reduced, and the latch-up immunityof the parasitic thyristor can be improved. Due to main body 6 a, achannel can be formed in a ring-shaped and continuous form, and can havesufficiently increased channel width, so that deterioration ofcharacteristics of collector-emitter current ICE can be suppressed.P⁺-layer 35 is electrically coupled to emitter electrode 21, and acontact resistance of emitter electrode 21 to base layer 5 can bereduced. Thereby, the base resistance can be reduced, and the latch-upimmunity of the parasitic thyristor can be further improved.

In n⁺-emitter layer 6, the width of each convex portion 6 b is madesmaller than the arrangement pitch of convex portions 6 b, and the gateelectrode lead-out line can be arranged with a sufficient margin, as inthe foregoing structure shown in FIG. 7.

[Second Modification]

FIGS. 12 and 13 schematically show cross sectional structures of anemitter region of an IGBT according to a second modification of thefirst embodiment of the invention. The cross sectional structure shownin FIG. 12 corresponds to the cross sectional structure taken along theline L10-L10 shown in FIG. 9. In the IGBT shown in FIG. 12, n⁺-emitterlayer 6 includes a main body 6 a of a ring-shaped form and convexportions 6 b projecting away from the collector layer, similarly to thestructure already described. A p⁺-layer 40 having substantially the samesize as n⁺-emitter layer 6 is arranged under n⁺-emitter layer 6. Otherstructures in the cross sectional structure shown in FIG. 12 are thesame as those in the cross sectional structure shown in FIG. 10.Corresponding portions are allotted with the same reference numerals,and description thereof is not repeated.

A cross sectional structure shown in FIG. 13 corresponds to the crosssectional structure taken along the line L11-L11 shown in FIG. 9. InFIG. 13, the convex portion (6 b) of the n“+”-emitter layer is notarranged, and main body 6 a is arranged. P⁺-layer 40 is formedsurrounding main body 6 a of n⁺-emitter layer 6, and is electricallycoupled to emitter electrode 21.

Other structures in the cross sectional structure shown in FIG. 13 arethe same as those in the cross sectional structure shown in FIG. 11.Corresponding portions are allotted with the same reference numerals,and description thereof is not repeated.

As shown in FIGS. 12 and 13, p⁺-layer 40 is formed deeper thann⁺-emitter layer 6 (6 a and 6 b) and at the portion below n⁺-emitterlayer 6 in p-base layer 5. Thus, the base resistance of p-base layer 5can be reduced, and further the contact resistance to p-base layer 5 canbe reduced, so that the effect similar to that by the structure shown inFIGS. 1 to 4 can be achieved.

[Third Modification]

FIGS. 14 and 15 schematically show sectional structures of the emitterregion according to a third modification of the first embodiment of theinvention. The cross sectional structure shown in FIG. 14 corresponds tothe cross sectional structure taken along the line L10-L10 in the planarlayout shown in FIG. 9. The sectional structure shown in FIG. 15corresponds to the sectional structure taken along the line L11-L11 inthe planar layout shown in FIG. 9.

As shown in FIG. 14, a heavily doped p⁺-layer 45 located undern⁺-emitter layer 6 (main body 6 a and convex portions 6 b) is formed inp-base layer 5. P⁺-layer 45 is embedded in p-base layer 5, and isseparated from emitter layer 6. Emitter electrode 21 is electricallycoupled to n⁺-emitter layer 6 and p-base layer 5. As shown in FIG. 15,in a region layer where main body 6 a is present but convex portion 6 bis not present in n⁺-emitter, p⁺-layer 45 is formed extending in p-baselayer 5 to a position under emitter electrode 21.

Other structures in the cross sectional structures shown in FIGS. 14 and15 are the same as those in the cross sectional structures shown inFIGS. 12 and 13. Corresponding portions are allotted with the samereference numerals, and description thereof is not repeated.

Even in the structure in which p⁺-layer 45 is arranged separately fromn⁺-emitter layer 6 in p-base layer 5 as shown in FIGS. 14 and 15,p⁺-layer 45 serves to reduce the base resistance of the portion undern⁺-emitter layer 6, and the latch-up immunity can be improved. Channelformation region 8 is formed continuously and can sufficiently suppressdeterioration of characteristics of collector-emitter current ICE. Theform of emitter layer 6 is the same as those shown in FIGS. 1 to 4 andthose in the first and second modifications. Since emitter layer 6 hasmain body 6 a and convex portions 6 b, the gate electrode lead-out linecan be arranged with a sufficient margin, and effects similar to thoseof the first embodiment and the first and second modifications alreadydescribed can be achieved.

According to the first embodiment of the invention, as described above,the lateral IGBT has the emitter layer formed into the gear-like formhaving the concave and convex portions (form having the main body andthe convex portions), and also has the heavily doped semiconductor layerformed in at least a portion deeper than the emitter layer. Therefore,the base resistance can be reduced, and the latch-up immunity of theparasitic thyristor can be improved. Further, the channel width can besufficiently large, and it is possible to suppress such deterioration ofthe collector-emitter current (ICE) characteristics when thecollector-emitter voltage (VC) is applied under the condition that acertain gate-emitter voltage (VCE) is applied. In addition, the gateelectrode lead-out line can be arranged without adversely affectingcontact between the emitter electrode and the emitter layer, so that itis possible to ensure a sufficiently large channel width and to drive alarge current.

Second Embodiment

FIG. 16 schematically shows a planar layout of an IGBT according to asecond embodiment of the invention. For the sake of simplicity, FIG. 16does not show the insulating films, electrode interconnection lines andheavily doped p-type layer in the base layer, similarly to FIG. 1.

The planar layout shown in FIG. 16 differs from that of the IGBTaccording to the first embodiment shown in FIG. 1 in the followingpoints. As an n⁺-emitter layer arranged in p-type base layer, unitemitter layers (unit regions) 60 are arranged in p-type base layer 5 atpredetermined circumferential intervals. Other arrangements in theplanar layout of the IGBT shown in FIG. 16 are the same as those in theplanar layout shown in FIG. 1. Corresponding portions are allotted withthe same reference numerals, and description thereof is not repeated.

A width a of unit emitter layer 60 along circumferential direction islarger than a distance b between adjacent unit regions. Unit emitterlayer 60 can have any rectangular-like form having four sides. The widthand the distance in the above description are dimensions in thecircumferential direction.

FIG. 17 schematically shows a cross sectional structure taken along aline L17-L17 shown in FIG. 16. As shown in FIG. 17, heavily doped p-typesemiconductor layer (p⁺-layer) 62 is formed, at the surface of p-baselayer 5, under unit emitter layers 60. In emitter layer contact region 7shown in FIG. 16, emitter electrode 21 is electrically connected to unitemitter layer 60 and p⁺-layer 62. Channel formation region 8 is formedadjacent to the unit emitter layer at the surface of p-base layer 5. Onchannel formation region 8, gate interconnection 16 a is formed withgate insulating film 15 interposed in between. Gate interconnection line16 a is formed of a continuously extending gate interconnection line,and forms a part of gate electrode 17.

Unit emitter layers 60 are formed in p-base layer 5 at the surface ofn⁻-layer 4, and heavily doped p⁺-layer 62 is formed in p-base layer 5deeper than and under the unit emitter layers.

FIG. 18 schematically shows a cross sectional structure taken along aline L18-L18 shown in FIG. 16. Each unit emitter layer 60 is formed inan island-like form. In the region shown in FIG. 18, unit emitter layer60 is not arranged, and p⁺-layer 62 is formed extending adjacently tochannel formation region 8, at the surface of p-base layer 5. P⁺-layer62 is coupled to emitter electrode 21.

Channel formation region 8 has a channel formed according to a voltageapplied to upper gate interconnection line 16 a. Unit emitter layer 60is not arranged in the region shown in FIG. 18. Therefore, during theturn-off or during the on state in the steady state, holes more tend notto flow through a region immediately under n⁺-emitter layer 60, but toflow to emitter electrode 21 through the p-base layer or p⁺-layer 62arranged between unit emitter layers 60. The holes flowing into a regionimmediately under the emitter layer are small in number, and anoperation of a parasitic npn bipolar transistor operation formed ofn⁻-layer 4, p-base layer 5 and n⁺-emitter layer 62 is suppressed.Thereby, it is possible to suppress latch-up of a parasitic thyristorformed of p-collector layer 2, n-buffer layer 3, n⁻-drift layer 4,p-base layer 5 and n⁺-emitter layer 60.

P⁺-layer 62 serves to reduce the base resistance of the portion underunit emitter layer 60, and can suppress the latch-up of the parasiticthyristor, similarly to the first embodiment.

The regions where emitter electrode 21 is directly connected to p⁺-layer62 are present, and the contact resistance between each emitterelectrode 21 and p-base layer 5 can be reduced, and the holes smoothlyflow through the contact region between p-base layer 5 (p⁺-layer 62) andemitter electrode 21, so that the latch-up immunity of the parasiticthyristor of unit emitter layer 60 and p⁺-layer 62 can be furtherimproved.

As shown in FIG. 16, the width a of the unit emitter layer along thecircumferential direction is much larger than an arrangement pitch b ofunit emitter layers 60. Therefore, the channel width can havesufficiently large due to the portions of channel formation region 8facing to unit emitter layers 60, and the characteristics ofcollector-emitter current ICE can be improved.

As shown in FIG. 16, the form of unit emitter layer 60 in the planarlayout may be selected from various forms such as a sector-like(fan-shaped) form, a trapezoidal form and a strip-like form. The unitemitter layer 60 may be sufficient to be formed into an island-like formproviding a closed region having four sides. In this description of thepresent application, these strip-like form, trapezoidal form andsector-like form each having four sides will be referred to as“rectangle-like form”.

Pitch b of unit emitter layers 60 is merely required to take a valueallowing formation of a channel of a sufficient width in channelformation region 8. Therefore, unit emitter layer 60 may be configuredto have a smaller outer portion and a wide inner portion facing tochannel formation region 8 in the radial direction.

Similarly to the structure shown in FIG. 8, the gate electrodeinterconnection line lead-out line may be arranged in a region betweensuch island-like regions.

[First Modification]

FIGS. 19 and 20 schematically show cross sectional structures of anemitter region of the IGBT according to a first modification of thesecond embodiment of the invention. The cross sectional structure shownin FIG. 19 corresponds to the sectional structure taken along the lineL17-L17 shown in FIG. 16, and the cross sectional structure in FIG. 20corresponds to the sectional structure taken along the line L18-L18shown in FIG. 16. In the structure shown in FIG. 19, p⁺-layer 62 isformed under unit n⁺-emitter layer 60. P⁺-layer 62 has a length in theradial direction shorter than that of unit emitter layer 60, and has anouter periphery aligned to the outer periphery of unit emitter layer 60.In this region, therefore, emitter electrode 21 is electricallyconnected to unit emitter layers 60 and p-type base layer 5.

In the region where unit emitter layer 60 is not arranged, p⁺-layer 62is formed continuously on the surface of p-base layer 5. This p⁺-layer62 is formed in a partial portion of p-base layer 5 and adjacent tochannel formation region 8. In this region, emitter electrode 21 iselectrically connected to p⁺-layer 62 and p-type base layer 5. Otherportions in the sectional structures shown in FIGS. 19 and 20 have thesame structures as those in the cross sectional structures shown inFIGS. 17 and 18. Corresponding portions are allotted with the samereference numerals, and description thereof is not repeated.

In the structures shown in FIGS. 19 and 20, merely p⁺-layer 62 is madeshort in the radial direction, and channel formation region 8 in p-baselayer 5 is formed extending to a portion under emitter electrode 21.Therefore, with the structures shown in FIGS. 19 and 20, effects similarto those of the structures shown in FIGS. 17 and 18 can be achieved.

[Second Modification]

FIGS. 21 and 22 schematically show cross sectional structures of theemitter region of the IGBT of a second modification of the secondembodiment according to the invention. In the structure of the secondmodification shown in FIGS. 21 and 22, the planar layout is the same asthe planar layout of the IGBT shown in FIG. 16, and unit emitter layers60 are arranged at predetermined pitches along circumference beingspaced from each other.

The cross sectional structure shown in FIG. 21 corresponds to the crosssectional structure taken along the line L17-L17 in FIG. 16, and thesectional structure shown in FIG. 22 corresponds to that taken along theline L18-L18 shown in FIG. 16. As shown in FIG. 21, p⁺-layer 62 hassubstantially the same width in the radial direction as unit n⁺-emitterlayer 60, and is formed extending to a portion under gateinterconnection 16 a so as to be in contact with channel formationregion 8. P⁺-layer 62 has the outer and inner peripheries aligned tothose of unit emitter layers 60, respectively. Emitter electrode 21 iselectrically connected to unit n⁺-emitter layers 60 and p-type baselayer 5.

As shown in FIG. 22, in the region where unit n⁺-emitter layer 60 is notpresent, p⁺-layer 62 is formed adjacently to channel formation region 8,and extending to a portion under gate electrode interconnection and line16 a and is electrically coupled to emitter electrode 21.

In the structures shown in FIGS. 21 and 22, heavily doped p⁺-layer 62 isarranged in p-base layer 5, and is formed deeper than unit n⁺-emitterlayer 60 so that the holes can be absorbed more efficiently, and can bedischarged to emitter electrode 21. Therefore, it is possible to achievethe operational advantages similar to those achieved by the structuresshown in FIGS. 17 and 19. In particular, p⁺-layer 62 is formed incontact with channel formation region 8 so that the base resistanceunder unit emitter layer 62 can be further reduced, and the holes fromthe channel formed in channel formation region 8 can be efficientlyabsorbed to be discharged to emitter electrode 21.

In this second embodiment, likewise a lateral p-channel IGBT may beemployed as the IGBT. The heavily doped n⁺-layer discharges electrons asminority carriers.

[Third Modification]

FIGS. 23 and 24 schematically show cross sectional structures of andaround an emitter region of an IGBT according to a third modification ofthe second embodiment of the invention. The planar layout of the IGBT ofthe third modification shown in FIGS. 23 and 24 is the same as that ofthe structure shown in FIG. 16, and unit n⁺-emitter layers 60 arearranged separately as an emitter layer in p-base layer 5 of the IGBT.

The cross sectional structure shown in FIG. 23 corresponds to the crosssectional structure taken along the line L17-L17 shown in FIG. 16, andthe cross sectional structure shown in FIG. 24 corresponds to the thattaken along the line L18-L18 shown in FIG. 16.

In the third modification, as shown in FIGS. 23 and 24, a p⁺-layer 64separated from unit n⁺-emitter layers 62 is arranged as an embeddedlayer in p-base layer 5, at a region deeper than unit n⁺-emitter layer6. P⁺-layer 64 is formed adjacently to channel formation region 8, andextending to a portion under emitter electrode 21 in p-base layer 5.Other arrangements and structures of the IGBT shown in FIGS. 23 and 24are the same as those in the cross sectional structures shown in FIGS.17 and 22. Corresponding portions are allotted with the same referencenumerals, and description thereof is not repeated.

In the structures shown in FIGS. 23 and 24, p⁺-layer 64 is formed in adeep region of p-base layer 5, whereby the base resistance at the bottomof unit n⁺-emitter layer 60 can be reduced, as in the foregoingstructures. In the region (see FIG. 24) where unit n⁺-emitter layer 60is not formed, p⁺-layer 64 can efficiently absorb holes, and cantransfer the holes to emitter electrode 21. As shown in FIGS. 23 and 24,therefore, embedded p⁺-layer 64 is formed into a ring-shaped, continuousform at the region deeper than unit n⁺-emitter layers 60 in p-base layer5 in the structure in which unit n⁺-emitter layers 60 are arrangedseparately as shown in FIGS. 23 and 24. Thus, the latch-up immunity ofthe parasitic thyristor can be improved. Further, a sufficiently largechannel width can be ensured (a circumferential width of the unitn⁺-emitter layer is much large than the pitch) so that a largecollector-emitter current can flow.

Embedded p⁺-layer 64 may have a radial width (width in the radialdirection) equal to the radial width of unit n⁺-emitter layer 62, andmay be aligned to unit n⁺-emitter layers 62.

According to the second embodiment of the invention, as described above,the unit emitters each having a rectangle-like and island-shaped formare arranged in the emitter region at a predetermined pitch, and theradial width of the unit emitter layer can be much larger than thearrangement pitch of the island-shaped regions, whereby minoritycarriers can be discharged to the emitter electrode via the heavilydoped impurity region while ensuring a sufficiently large channel width.Thereby, the latch-up immunity of the parasitic thyristor can beimproved, and the driving current can be increased. Further, theturn-off time can be reduced.

Third Embodiment

FIG. 25 schematically shows a planar layout of the IGBT according to athird embodiment of the invention. For the sake of simplicity, FIG. 25does not show the insulating films, electrodes and interconnections inthe planar layout.

The planar layout shown in FIG. 25 has the same arrangement as that ofthe IGBT according to the first embodiment shown in FIG. 1. The IGBTshown in FIG. 25 has a cross sectional structure, in which a p⁺-layer isformed deeper than p-base layer 5, as will be described later in detail.N⁺-emitter layer 6 includes main body 6 a of a ring-shaped, continuousform as well as convex portions 6 b protruding in the radial direction.Other arrangements of the planar layout of the IGBT shown in FIG. 25 isthe same as those of the IGBT shown in FIG. 1. Corresponding portionsare allotted with the same reference numerals, and description thereofis not repeated.

FIG. 26 schematically shows a cross sectional structure taken along aline L26-L26 shown in FIG. 25. In FIG. 26, a base layer region 70includes a p-base layer 72 formed deeper than n⁺-emitter layer 6 inchannel formation region 8, and a p⁺-layer 74 formed deeper than p-baselayer region 72 and arranged extending under n⁺-emitter layer 6.N⁺-emitter layer 6 and p⁺-layer 74 are coupled to emitter electrode 21.Gate interconnection line 16 a (16) is formed on channel formationregion 8 with gate insulating film 15 placed in between. Gateinterconnection line 16 is coupled to gate electrode 17. Base layerregion 70 is formed at the surface of n⁻-drift layer 4.

FIG. 27 schematically shows a cross sectional structure taken along aline L27-L27 shown in FIG. 25. In the sectional structure shown in FIG.27, in n⁺-emitter layer 6, main body 6 a is present, but convex portion6 b is not present. Therefore, p⁺-layer 74 is formed adjacently to anddeeper than p-base layer 72, and is coupled to an entire surface bottomsurface of emitter electrode 21. Other arrangements in the sectionalstructure shown in FIG. 27 are the same as those shown in FIG. 26.Corresponding portions are allotted with the same reference numerals,and description thereof is not repeated.

P⁺-layer 74 is formed deeper than p-base layer 72, below n⁺-emitterlayer 6 (6 a). Thus, the following effect can be achieved in addition tothe effects previously described in the first embodiment.

In the parasitic npn bipolar transistor formed of n⁻-layer 4, p-baselayer 72 and n⁺-emitter layer 6, the p-base region immediately undern⁺-emitter layer 6 (6 a) has a small width, so that the base resistancecan be reduced, and the parasitic npn bipolar transistor operation canbe suppressed. Thereby, the latch-up of the parasitic thyristor can besuppressed, and the latch-up immunity of the parasitic thyristor can beimproved, similarly to the first embodiment.

P⁺-layer 74 reduces the base resistance, and holes HL flow through thebase resistance in p⁺-layer 74. In this case, the electric fieldintensity at a curvature portion AR2 of the bottom of p⁺-layer 74 may behigher than the electric field intensity at a curvature portion AR1 ofp-base layer 72 (because the impurity concentration of p⁺-layer 74 ishigher than that of p-base layer 72). In this case, therefore, a holecurrent (flow of holes HL) enters through curvature portion AR2 of thebottom of p⁺-layer 74 so that a length of the hole current flowingimmediately under n⁺-emitter layer 6 (6 a) is short. Therefore, thelength of the base resistance immediately under n⁺-emitter layer 6 (6 a)is short so that the base resistance can be reduced. Thereby, theparasitic bipolar transistor operation can be suppressed, and thelatch-up of the parasitic thyristor can be suppressed.

P-base layer 72 has a short width in the radial direction so that thebase resistance can be further reduced.

[First Modification]

FIGS. 28 and 29 schematically show a cross sectional structure of anemitter region of the IGBT according to a first modification of thethird embodiment of the invention. The planar layout of the IGBT of thefirst modification of the third embodiment is the same as that shown inFIG. 25. The sectional structure shown in FIG. 28 corresponds to thesectional structure taken along the line L26-L26 shown in FIG. 25, andthe sectional structure shown in FIG. 29 corresponds to the sectionalstructure taken along the line L27-L27 shown in FIG. 25.

N⁺-emitter layer 6 includes main body 6 a extending continuously in thering-shaped form as well as projections (convex portions) 6 b projectingaway from the collector layer. In FIG. 28, base layer region 70 includesa heavily doped p⁺-layer 75 formed under emitter layer 6 (6 a and 6 b),and p-base layers 72 and 76 arranged on the opposite sides of p⁺-layer75, respectively. N⁺-emitter layer 6 and p-base layer 76 are coupled toemitter electrode 21. P-base layer 72 is formed deeper than emitterlayer 6, under channel formation region 8 and emitter layer main body 6a.

As shown in FIG. 29, p⁺-layer 75 is also arranged in the region whereconvex portion 6 b of emitter layer 6 is not arranged, and this p⁺-layer75 is formed from a portion under emitter layer main body 6 a to aportion under emitter electrode 21, being deeper than p-base layers 72and 79.

Other arrangements in the cross sectional structures shown in FIGS. 28and 29 are the same as those in the cross sectional structures shown inFIGS. 26 and 27, respectively. Corresponding portions are allotted withthe same reference numerals, and description thereof is not repeated.

In this arrangement of the first modification, p⁺-base layer 75 isformed deeper than p-base layers 72 and 76 and under n⁺-emitter layer 6.Similarly to the first embodiment already described, therefore, the baseresistance of the p-base layer under the emitter layer can be reduced,the base resistance of the parasitic bipolar transistor can be reducedand the latch-up immunity of the parasitic thyristor can be improved.Similarly to the structures shown in FIGS. 26 and 27, with p⁺-layer 75,the holes of minority carriers can be absorbed to be discharged toemitter electrode 21. Further, effects similar to those of the firstembodiment can be achieved.

[Second Modification]

FIGS. 30 and 31 schematically show cross sectional structures of anemitter region of an IGBT according to a second modification of thethird embodiment of the invention. In the structure of this secondmodification, n⁺-emitter layer 6 includes main body 6 a and convexportions 6 b, similarly to the planar layout shown in FIG. 25. The crosssectional structure shown in FIG. 30 corresponds to the cross sectionalstructure taken along the line L26-L26 shown in FIG. 25, and thestructure shown in FIG. 31 corresponds to the cross sectional structuretaken along the line L27-L27 shown in FIG. 25.

The cross sectional structures shown in FIGS. 30 and 31 differ from thecross sectional structures shown in FIGS. 28 and 29 in the followingarrangements. A p⁺-layer 75B is formed deeper than p-base layers 72 and76, below n⁺-emitter layer 6 (6 a and 6 b). P⁺-layer 75B has an innerperipheral portion aligned to the inner peripheral portion of n⁺-emitterlayer 6, and has an outer peripheral portion aligned to the outerperipheral portions of the convex portions (6 b) of n⁺-emitter layer 6.

Other arrangements in the cross sectional structures shown in FIGS. 30and 31 are the same as those in the cross sectional structures shown inFIGS. 28 and 29, respectively. Corresponding portions are allotted withthe same reference numerals, and description thereof is not repeated.

In the structures shown in FIGS. 30 and 31, p⁺-layer 75B is formed withits inner peripheral portion aligned to the inner peripheral portion ofn⁺-emitter layer 6. Thereby, the base resistance under n⁺-emitter layer6 can be reduced, and the parasitic bipolar transistor operation can besuppressed. Also, operations and effects similar to those of thestructures shown in FIGS. 26 to 29 can be achieved.

[Third Modification]

FIGS. 32 and 33 schematically show cross sectional structures of anemitter region of an IGBT according to a third modification of the thirdembodiment of the invention. The cross sectional structure shown in FIG.32 corresponds to the cross sectional structure taken along the lineL26-L26 in the planar layout shown in FIG. 25, and the cross sectionalstructure shown in FIG. 33 corresponds to the cross sectional structuretaken along the line L27-L27 shown in FIG. 25.

In the arrangement of the third modification, as shown in FIGS. 32 and33, a p⁺-layer 75C is embedded in the p-base layer, and is formed deeperthan p-base layers 72 and 76. P⁺-layer 75C is separated from n⁺-emitterlayer 6 (6 a and 6 b). Therefore, p-base layers 72 and 76 formed on theopposite sides of p⁺-layer 75C are continuously connected via a portionunder the bottom of n⁺-emitter layer 6.

Other arrangements in the cross sectional structures shown in FIGS. 32and 33 are the same as those in the sectional structures shown in FIGS.28 to 31. Corresponding portions are allotted with the same referencenumerals, and description thereof is not repeated.

As shown in FIGS. 32 and 33, p⁺-layer 75C spaced from n⁺-emitter layer 6is deeply formed under n⁺-emitter layer 6, whereby n⁺-emitter layer 6can have a short width in the base region layer owing to main body 6 a,and the base resistance can be small. Further, similarly to thestructures shown in FIGS. 26 and 27, with p⁺-layer 75C, holes HL can beefficiently absorbed to be transmitted to emitter electrode 21. Morespecifically, the electric field intensity at the curvature portion ofp⁺-layer 75C can be larger than that at the curvature portion of p-baselayer 72, so that p⁺-layer 75C can efficiently absorb the holes, and itis possible to reduce the resistance value of the path through which thehole current flows under n⁺-emitter layer 6.

Due to main body 6 a, the length of the flowing path of the hole currentcan be reduced. Similarly to the structures shown in FIGS. 26 to 31,therefore, the operation of the parasitic bipolar transistor can besuppressed, and the latch-up immunity of the parasitic thyristor can beimproved. Further, channel formation region 8 is formed continuously,and the channel width can be sufficiently large so that thecollector-emitter current of a sufficient magnitude can be driven.

According to the third embodiment of the invention, the emitter layerregion has a gear-like form, is formed of the main body and the convexportions that are arranged at the predetermined intervals and arecoupled to the main body, and the heavily doped impurity region isformed deeper than the base layer so that the minority carriers can beefficiently absorbed. Thereby, the base resistance under the emitterlayer can be reduced, the parasitic bipolar transistor operation can besuppressed and the latch-up immunity of the parasitic thyristor can beimproved. The channel is formed continuously in a ring-shaped form, andthe channel width is large to cause a sufficiently largecollector-emitter current to flow.

Similarly to the other embodiments, the emitter region in this thirdembodiment has a gear-like form, and the width and pitch conditions ofthe convex portions of the emitter layer region can be appropriately setto allow arrangement of the gate electrode lead-out line in the regionbetween the convex portions, so that effects similar to those of thefirst embodiment can be achieved.

Fourth Embodiment

FIG. 34 schematically shows a planar layout of an IGBT according to afourth embodiment of the invention. FIG. 34 does not show theelectrodes, interconnections and insulating layers, either. The planarlayout shown in FIG. 34 differs from that shown in FIG. 16 in thefollowing structures. In a base layer region 80 formed along an outerperipheral portion of n⁻-layer 4, a heavily doped p⁺-layer is formeddeeper than the p-base layer. Unit emitter layers 60 spaced from eachother implement the emitter layer. Unit emitter layers 60 have width aand pitch b that satisfy a relationship similar to that in the IGBT ofthe second embodiment already described.

FIG. 35 schematically shows a cross sectional structure taken along aline L35-L35 shown in FIG. 34. As shown in FIG. 35, a p⁺-layer 84 thatis doped more heavily than p-type base layer 80 is formed, under unitn⁺-emitter layer 60, deeper than p-type base layer 80. P-type base layer82 is formed extending under channel formation region 8 and to a partunder n⁺-emitter layer 60. Emitter electrode 21 is electricallyconnected to unit n⁺-emitter layer 60 and p⁺-layer 84.

FIG. 36 schematically shows a cross sectional structure taken along aline L36-L36 shown in FIG. 34. In the region shown in FIG. 36, theemitter layer is not arranged at the surface of p⁺-layer 84. P⁺-layer 84is coupled to p-type base layer 82. Emitter electrode 21 is electricallyconnected to heavily doped p⁺-layer 84. Other arrangements in the crosssectional structures shown in FIGS. 35 and 36 are the same as thoseshown in FIGS. 17 and 18. Corresponding portions are allotted with thesame reference numerals, and description thereof is not repeated.

As shown in FIGS. 35 and 36, heavily doped p⁺-layer 84 is formed deeperthan p-base layer 82 in the structure having unit emitter layers 60 thatare arranged separately from each other along the circumferencedirection in the emitter electrode contact region. The electric fieldintensity at curvature portion AR2 under p⁺-layer 84 shown in FIG. 35can be stronger than that at curvature portion AR1 of p-base layer 82,and holes HL can be efficiently transmitted via p⁺-layer 84 to emitterelectrode 21. In particular, holes HL can be transmitted to emitterelectrode 21 with a low resistance in the case where n⁺-emitter layer 60is not arranged as shown in FIG. 36. P⁺-layer 84 is arranged under then⁺-emitter layer so that the resistance value of the portion immediatelyunder n⁺-emitter layer 60 is small, and a voltage across PN junctionbetween the p⁺-layer and n⁺-emitter layer 60 is equal to or lower thanthe built-in voltage so that injection of the minority carriers issuppressed. Therefore, in addition to the effects of the structure ofthe second embodiment, p⁺-layer 84 can absorb more efficiently holes HL,to transmit the holes to emitter electrode 21.

[First Modification]

FIGS. 37 and 38 schematically show cross sectional structures of anemitter region of a first modification of the IGBT according to thefourth embodiment of the invention. The cross sectional structure shownin FIG. 37 corresponds to the sectional structure taken along the lineL35-L35 shown in FIG. 34, and the cross sectional structure shown inFIG. 38 corresponds to the cross sectional structure taken along theline L36-L36 shown in FIG. 34.

As shown in FIGS. 37 and 38, a heavily doped p⁺-layer 85A is formedbetween p-base layer 82 formed in channel formation region 8 and ap-base layer 86 formed under emitter electrode 21 at an outer peripheryportion of base region 80. Unit n⁺-emitter layers 60 are formed at thesurface of p⁺-layer 85. In FIG. 37, emitter electrode 21 is connected tounit emitter layers 60 and p-type base layer 86. In the region shown inFIG. 38, unit emitter layer 60 is not arranged, and therefore, emitterelectrode 21 is electrically connected to p⁺-layer 85A and p-type baselayer 86. Other arrangements in the cross sectional structures shown inFIGS. 37 and 38 are the same as those shown in FIGS. 35 and 36.Corresponding portions are allotted with the same reference numerals,and description thereof is not repeated.

With p⁺-layer 85A being arranged in the structure shown in FIGS. 37 and38, holes can be efficiently transmitted to emitter electrode 21 viap⁺-layer 85A in the region (see FIG. 38) between these unit n⁺-emitterlayers in the case where unit n⁺-emitter layers 60 are arranged apartfrom each other, similarly to the foregoing structures. Further, heavilydoped p⁺-layer 85A accompanies a higher electric field to absorb holesmore efficiently than p-base layer 82, and can transmit them to emitterelectrode 21. Since emitter electrode 21 is electrically connected toheavily doped p⁺-type layer 85A, the contact resistance between the baselayer and the emitter electrode can be reduced, and accordingly, thebase resistance can be reduced.

[Second Modification]

FIGS. 39 and 40 schematically show cross sectional structures of anemitter region of a second modification of the IGBT according to thefourth embodiment of the invention. The sectional structures in FIGS. 39and 40 differ from those in FIGS. 37 and 38 in the followingarrangements. A p⁺-layer 85B has substantially the same width as unitn⁺-emitter layer 60 in the radial direction, and has inner and outerperipheral portions aligned to those of unit n⁺-emitter layers 60 in theregion shown in FIG. 39. Other arrangements in the sectional structuresshown in FIGS. 39 and 40 are the same as those shown in FIGS. 37 and 38.Corresponding portions are allotted with the same reference numerals,and description thereof is not repeated.

In the structures shown in FIGS. 39 and 40, heavily doped p⁺-layer 85Bis formed in alignment with unit n⁺-emitter layers 60 and deeper thanbase layers 82 and 86. Therefore, the base resistance of the portionimmediately under unit n⁺-emitter layers 60 can be reduced moreadvantageously, and the voltage difference between the base and theemitter can be reduced. P⁺-layer 85B is formed longer than that shown inFIGS. 37 and 38, and can more reduce the base resistance. In addition tothe effects of the structures shown in FIGS. 37 and 38, such effects canbe achieved that the base resistance can be further reduced, and thelatch-up immunity of the parasitic thyristor can be improved.

[Third Modification]

FIGS. 41 and 42 schematically show cross sectional structures of anemitter region of a third modification of the IGBT according to thefourth embodiment of the invention. The cross sectional structures shownin FIGS. 41 and 42 differ from the cross sectional structures shown inFIGS. 37 to 40 in the following points. A heavily doped p⁺-layer 85Cformed deeper than p-base layer 82 is spaced from unit n⁺-emitter layers60, and is formed deeper than p-type base layers 82 and 86 as anembedded layer in p-type base layers 82 and 86. In p-base layer region80, therefore, p-base layers 82 and 86 are coupled with each other onthe surface portion of p⁺-layer 85C. In particular, in the region whereunit n⁺-emitter layer 60 is not formed (see FIG. 42), p⁺-layer 85C ismerely arranged as an embedded impurity region deeper than p-base layers82 and 86. In this region, the emitter electrode is electricallyconnected to p-type base layers 82 and 86.

Therefore, p⁺-layer 85C determines the path of holes below unitn⁺-emitter layers 60 even in the structure where p⁺-layer 85C is formedas the embedded region, and the base resistance can be reduced. P⁺-layer85C is formed deeper than p-base layers 82 and 86, and thereforep⁺-layer 85C can efficiently absorb the holes passed from the lowerportion of the p-base layer owing to a high electric field, and cantransmit the holes to emitter electrode 21.

In this fourth embodiment, radial width (width in the radial direction)a of unit n⁺-emitter layer 60 is larger than arrangement pitch b of theunit emitter layers. However, radial width a of unit n⁺-emitter layer 60may be smaller than arrangement pitch b, provided that a sufficientchannel width can be ensured.

According to the fourth embodiment of the invention, as described above,in the emitter layer, the unit emitter layers are formed of island-likeregions spaced from each other, and the heavily doped impurity region isformed in and being deeper than the base layer. Therefore, the minoritycarriers can be efficiently absorbed. By reducing the base resistance ofthe portion below the emitter layer, the minority carriers can beeffectively absorbed, to enhance the latch-up immunity. In addition, theturn-off time can be reduced. Further, the unit emitter layers of theisland-like form (rectangle-like form) are arranged, and the sufficientchannel width can be ensured so that the sufficient collector-emittercurrent can be driven.

Fifth Embodiment

FIG. 43 schematically shows a planar layout of a lateral MOSFETaccording to a fifth embodiment of the invention. For the sake ofsimplicity, FIG. 43 does not show the electrodes, insulating films andelectrode interconnection lines.

In FIG. 43, the lateral n-channel MOS transistor includes a heavilydoped n⁺-type drain layer (first semiconductor layer region) 102 formedin a central portion, an n⁻-drift layer (semiconductor region) 104formed surrounding n⁺-drain layer 102, and a p-base layer (secondsemiconductor layer region) 105 formed surrounding n⁻-drift layer 104.P-base layer 105 includes a channel formation region 108 neighboring ton⁻-drift layer 14, and an n⁺-source layer 106 of a gear-like form formedalong the outer periphery of channel formation region 108. N⁺-sourcelayer 106 includes a main body 106 a that is formed continuously into asingle body form, and convex portions 106 b protruding away from drainlayer 102 in the radial direction. A source electrode contact region 107is arranged above convex portions 106 b and at an outer peripheralportion of p-base layer 105.

FIG. 44 schematically shows a cross sectional structure taken along aline L44-L44 shown in FIG. 43. In FIG. 44, the lateral n-channel MOSFETis formed at the surface of n⁻-layer (n⁻-drift layer) 104 formed at thesurface of p-type substrate 110. N⁺-drain layer 102 is formed at thesurface of n⁻-drift layer 104, and n⁺-drain layer 102 is electricallyconnected to a drain electrode 113. Drain electrode 113 is electricallyconnected to a drain electrode lead-out line 114 formed at first andsecond insulating films 111 and 112.

In the vicinity of the source region, p-base layer 105 is formed at thesurface of n⁻-drift layer 104, and n⁺-source layer 106 is formed at thesurface of p-base layer 105. Channel formation region 108 is arrangedadjacent to the n⁺-source layer and at the inner peripheral portion ofthe surface of p-base layer 105. A gate interconnection line 116 a isformed on channel formation region 108 with a gate insulating film 115interposed in between, and is coupled to a conductive layer portionformed on first interlayer insulating film 111. Gate interconnectionline 116 is electrically connected to a gate electrode 117 extendingthrough second insulating film 112.

A p⁺-layer 120 is formed being doped more heavily than p-base layer 105and deeper than n⁺-source layer 106. These n⁺-source layer 106 andp-type base layer 105 are commonly coupled to a source electrode 121. Inthe cross sectional structure shown in FIG. 44, n⁺-source layer 106includes main body 106 a and convex portions 106 b.

In the region where only main body 106 a of source layer 106 of thelateral MOSFET is arranged, the cross sectional structure near thesource region is the same as that shown in FIG. 4. Source layer 106 isarranged in place of emitter layer 6.

As seen from the cross sectional structure shown in FIG. 44, IGBT andMOSFET have the same structure in the source and emitter regions, exceptfor that the lateral n-channel MOSFET has the drift layer and the drainlayer formed of the same conductivity type, and has no buffer layer indrain layer 102 in the structure of the lateral n-channel IGBT.

Similarly to the discharging of minority carriers in the emitter regionof the IGBT already described in connection with the first to fourthembodiments, the lateral MOSFET can efficiently transfer the holes tosource electrode 121 owing to provision of heavily doped p⁺-layer 120deeper than n⁺-source layer 106 in p-base layer 105. Further, it ispossible to reduce the base resistance of the parasitic npn bipolartransistor formed of n⁺-source layer 106, p⁺-layer 120 and p-base layer105, and n⁻-layer 104 under source electrode 121, and latch-up immunityof the parasitic thyristor can be improved. Accordingly, the fifthembodiment can achieve effects similar to those of the lateral IGBT ofthe first to fourth embodiments already described.

The cross sectional structure of the source region portion of thelateral MOSFET is the same as that of the lateral IGBT alreadydescribed, and therefore n⁺-source layer 106 may be formed of separatedunit n⁺-source layers each arranged in an island-like form, and can havethe same shape or form as n⁺-source layers 106 in the IGBTs of the firstto fourth embodiments already described.

Similarly to the first to fourth embodiments, it is merely required toplace heavily doped p⁺-layer 120 below n⁺-source layer 106 and dopedmore heavily than p-base layer 105, and p⁺-layer 120 may be arrangeddeeper than p-base layer 100. These structures exhibit the same crosssectional structures as those already described, and therefore the crosssectional structures thereof are not shown in the figures for the sakeof simplicity. Heavily doped p⁺-layer 120 may have the same structure asthat already described in connection with the first to fourthembodiments, and the tolerance of the parasitic thyristor can likewisebe improved. In channel formation region 108, a circular channel iscontinuously formed, and a large drain-source current can be driven. Theminority carriers can be efficiently discharged to reduce the turn-offtime.

The structure according to the invention can be applied to the lateralMOSFET having other structures such as a trench gate MOSFET having agate structure of a trench structure. The structure of the invention canbe also applied to a p-channel MOSFET by exchanging the conductivitytypes.

According to the fifth embodiment of the invention, as described above,the lateral n-channel MOSFET is formed to have, at the source region,p⁺-layer 120 formed below the n⁺-source layer and doped more heavilythan p-base layer 105, and therefore can efficiently discharge the holesto source electrode 121. Also, the base resistance of the portion underthe n⁺-source layer can be reduced, and the latch-up immunity of theparasitic thyristor can be improved. Further, the turn-off time can bereduced. The channel is formed along circumference in the channelformation region, and a large drain-source current can be driven.

Sixth Embodiment

FIG. 45 schematically shows a planar layout of an IGBT according to asixth embodiment of the invention. The IGBT includes a plurality ofcells aligned to each other for driving a large current. FIG. 45representatively shows IGBT cells 150 a-150 c. Each of cells 150 a-150 chas a circular form, and includes p⁺-collector layer 2 formed in acentral portion, n-buffer layer 3 surrounding collector layer 2,n⁻-drift layer 4 surrounding n-buffer layer 3, and p-base layer 5 formedalong the outer periphery of n⁻-drift layer 4. N⁺-emitter layer 6 isformed in the region of p-base layer 5. In the layout shown in FIG. 45,n⁺-emitter layer 6 includes convex portions 6 b and main body 6 a of thering-shaped, continuous form. Channel formation region 8 is formed inp-base layer region 5 formed at an inner periphery of the main body 6 a.P-base layers 5 in these cells 150 a-150 c are arranged adjacent to eachother. Similarly to the first to fifth embodiments already described,FIG. 45 showing the planar layout does not show the electrodeinterconnections, insulating films and heavily doped p⁺-layer arrangedat the base layer. Similarly to the first embodiment, the heavily dopedp⁺-layer may be formed, under n⁺-emitter layer 6, being doped moreheavily than p-base layer 5, or may be formed deeper than p-base layer5.

Emitter layer 6 may be divided into unit emitter layers, similarly tothe second embodiment.

In the structure shown in FIG. 45, the lateral MOSFET can be achievedwith the p⁺-collector layer replaced with an n⁺-drain layer, and withn-buffer layer 3 omitted, and a similar arrangement is employed for thelateral MOSFET.

By arranging cells 150 a-150 c, the channel can be wider than that in astructure employing an IGBT cell of an elliptic structure that will bedescribed later, and a larger current can be driven.

[Modification]

FIG. 46 shows a modification of the planar layout of the IGBT accordingto the sixth embodiment of the invention. The planar layout shown inFIG. 46 differs from that shown in FIG. 45 in the followingarrangements. Unit cells 150 d-150 f are aligned to each other, and theadjacent cells share p-base layer region 5. Therefore, a total layoutarea of cells 150 d-150 f can be smaller than that in the planar layoutshown in FIG. 45.

Other arrangements of the IGBT shown in FIG. 46 is the same as that ofthe IGBT shown in FIG. 45. Corresponding portions are allotted with thesame reference numerals, and description thereof is not repeated.

In the planar layout shown in FIG. 46, the heavily doped p⁺-layer hasonly to be arranged under emitter layer 6, and may be formed beingshallower than the p-base layer, or may be formed deeper than the p-baselayer. The heavily doped p⁺-layer may be formed into an embeddedstructure. Instead of the continuous structure having main body 6 a andconvex portions 6 b, emitter layer 6 may be formed with the unit emitterlayers separated from each other.

Cells 150 a-150 c or 150 d-150 f each are formed into a circle-shapedform to be arranged as shown in FIG. 45 or 46, and thereby can increasethe channel width to drive a larger current as compared with the casewhere the cell of the single elliptic structure is used, as will bedescribed below.

Referring to FIG. 47, an IGBT 200 of an elliptic structure isconsidered. IGBT 200 includes an ellipse-shaped p⁺-collector layer 202formed in a central portion, an ellipse-shaped n-buffer layer 203surrounding collector layer 202, an ellipse-shaped n⁻-drift layer 204surrounding n-buffer layer 203 and an ellipse-shaped p-base layer 205surrounding drift layer 204. N⁺-emitter layer 206 is formed in p-baselayer 205, and channel formation region 208 is formed in n⁺-emitterlayer 206.

The elliptic IGBT shown in FIG. 47 has a track-like form formed of alinear portion and circumferential portions. The linear portion of thistrack-like form (ellipse-shaped form) has substantially the same crosssectional structure as the IGBT of the first embodiment and others (thep⁺-emitter layer may not be provided). It is now considered to arrangecircular cells, e.g., shown in FIG. 46 in the same layout area as theIGBT of the elliptic structure shown in FIG. 47. In this arrangement,when cells 150 d-150 f are arranged as shown in FIG. 48, the channelformation regions 8 of cells 150 d and 150 f have the circumferentialportions identical with the circumferential portions of the channelformation region of the elliptic IGBT shown in FIG. 47. It is assumedthat a distance CL is present between central portions of p⁺-collectorlayers 2 in the adjacent cells. It is also assumed in each of cells 150a-150 f that a distance r is present from the center of p⁺-collectorlayer 2 to the center of channel formation region 8. A total length ofthe channel regions of cells 150 d and 150 e corresponding to a channellength CL of the elliptic IGBT is expressed by the following equality:2·π·(¼)·2=π·r

Therefore, when the distance between the centers of p⁺-collector layers2 of the adjacent cells (150 d and 150 e) is smaller than (3·r), thefollowing relationship can be achieved.CL<3·r<π·r

The above relationship is achieved by reducing the distance between thechannel formation regions of the adjacent cells to a value smaller thanr. The channel formation region is formed at the base layer region ofthe outer peripheral portion of the cell, and the above conditions arereadily satisfied.

Therefore, as compared with the elliptic IGBT shown in FIG. 47, thearrangement of unit cells 150 d-150 f (or 150 a-150 c) can increase thecircumferential length of channel formation regions 8, and thereby it ispossible to increase the channel width with respect to the currentflowing from the p⁺-collector layer to the emitter layer so that a largecurrent can be driven.

FIG. 49 shows characteristics of collector-emitter current ICE exhibitedwhen collector-emitter voltage VCE is applied under the condition that acertain gate-emitter voltage VGE is applied in the IGBT of the ellipticstructure shown in FIG. 47. The abscissa axis gives collector-emittervoltage VCE with units of V (volt), and the ordinate axis givescollector-emitter current ICE with units of A (ampere). The measuredtemperature is the ambient temperature. However, the IGBT of theelliptic structure does not have a heavily doped semiconductor layer(p⁺-layer) in the base layer.

In the IGBT of the elliptic structure, as shown in FIG. 49,collector-emitter current ICE gradually rises when collector-emittervoltage VCE gradually increases. When collector-emitter voltage VCEreaches near 6 V and collector-emitter current ICE reaches about 0.2 A,even when collector-emitter voltage VCE further rises from the voltageregion, collector-emitter current ICE is substantially in a saturatedstate. Therefore, collector-emitter current ICE will not increasesufficiently even when the collector-emitter voltage VCE increases. Inthe region where collector-emitter voltage VCE rises from 0 V to 6 V,collector-emitter current ICE slowly rises, and the on-resistance(VCE/ICE) becomes high. This is because the elliptic structure device isnot provided with the p⁺-layer (p⁺-emitter layer) in the base layer.

FIG. 50 shows characteristics of collector-emitter current ICE exhibitedwhen collector-emitter voltage VCE is applied under the condition that acertain gate-emitter voltage VGE is applied in the structure of the IGBT(see FIG. 48 or 46) of the circular structure according to theinvention. In FIG. 50, the abscissa axis gives collector-emitter voltageVCE with units of V (volt), and the ordinate axis givescollector-emitter current ICE with units of A (ampere). Measurementtemperature is the ambient temperature.

According to the cells of the circular structure, as shown in FIG. 50,when collector-emitter voltage gradually increases to near 6.0 V, thecollector-emitter current reaches about 0.4 A, and the collector-emittercurrent exhibits substantially the saturated state near that pointonward. In this case, however, the collector-emitter current ICE takesthe value that is nearly twice as large as that in the IGBT of theelliptic structure shown in FIG. 47. In the region wherecollector-emitter voltage VCE rises from 0 V to 6 V, the rising gradientis large, and the on-resistance (VCE-ICE) can be reduced. These areachieved by the facts that the total channel width is large, and thebase resistance is reduced. Even when the current quantity increases,the parasitic bipolar transistor in the emitter region can be preventedfrom being turned on because the p⁺-layer is arranged under the emitterlayer. Therefore, the latch-up immunity of the parasitic thyristor canbe improved.

As described above, the sixth embodiment of the invention employs aplurality of circular IGBT as the cells. This arrangement can increasethe length of the channel region and therefore the channel width ascompared with the structure using a single elliptic IGBT, and therebycan increase the collector-emitter current. Effects similar to those ofthe first to fourth embodiments can also be achieved.

Seventh Embodiment

FIG. 51 schematically shows a cross sectional structure of asemiconductor device (lateral n-channel IGBT) according to a seventhembodiment of the invention. The planar (surface) layout of the IGBTshown in FIG. 51 is substantially the same as the planar layout of theIGBT shown in FIG. 1. In the IGBT shown in FIG. 51, an embeddedinsulating film 310 is arranged between n⁻-layer 4 and a semiconductorsubstrate 300. Since semiconductor substrate 300 is isolated fromn⁻-layer 4, the conductivity type thereof may be either of p- andn-types.

Other structures of the IGBT shown in FIG. 51 are the same as those ofthe IGBT shown in FIG. 2. Corresponding portions are allotted with thesame reference numerals, and description thereof is not repeated.

The structure in which an embedded insulating film 310 is arranged atthe surface of semiconductor substrate 300, and a transistor is formedon embedded insulating film 310, is generally referred to as an “SOI(Silicon On Insulator) structure,” and is also referred to as a“dielectric isolation structure”. In the structure shown in FIG. 2,embedded insulating film 310 is not employed, and n⁻-layer 4 and p-typesemiconductor substrate (10) are isolated from each other by a PNjunction formed between them. This structure is referred to as a“junction isolation structure”. As compared with the junction isolationstructure, the provision of embedded insulating film 310 canelectrically isolate n⁻-layer 4 from substrate 300 more reliably, andproduces the depletion layer only in the n⁻-layer so that a fastoperation can be achieved.

Other arrangements of the IGBT shown in FIG. 51 are the same as those ofthe IGBT shown in FIG. 2. Corresponding portions are allotted with thesame reference numerals, and description thereof is not repeated.

FIG. 52 represents turn-off waveforms at the time of resistance loadswitching operation of the IGBT. In FIG. 52, the abscissa axis gives theturn-off time (seconds), and the ordinate axis gives collector-emittervoltage VCE (×100 V) as well as collector-emitter current ICE (A). Acurve I represents the collector-emitter voltage of the IGBT of thedielectric isolation structure (FIG. 51), and a curve II represents, asa comparison example, collector-emitter voltage VCE of the IGBT of thejunction isolation type, e.g., shown in FIG. 2. A curve III representscollector-emitter current ICE of the dielectric isolation structure, anda curve IV represents the collector-emitter current of the IGBT of thejunction isolation structure.

As shown in FIG. 52, a fall time tf (i.e., a time required for fallingof collector-emitter current ICE from 90% to 10% of the maximum value)of the IGBT of the junction isolation type is near 1 μs. Therefore, theswitching speed is slow, and therefore the switching loss is relativelylarge. In the dielectric isolation structure, fall time tf is slightlylarger than 0.5 μs, and the switching speed is high so that theswitching speed loss can be reduced. In connection with the turn-offwaveform in the resistance load switching operation, the absolute valueof the rising rate of the VCE waveform (curve I) is substantially equalto the absolute value of the falling rate of the waveform (curve III)representing collector-emitter current ICE, and it is apparent that theswitching operation is performed fast.

Therefore, it is apparent that the dielectric isolation structure canperform the faster switching operation than the junction isolationstructure does.

In the junction isolation structure, however, it can be seen that duringthe turn-off in the switching period, collector-emitter voltage VCErapidly rises to enter the off state (curve II), and collector-emittercurrent ICE rapidly lowers (curve IV). In the junction isolationstructure, therefore, the provision of the p⁺-layer and the ring-shapedemitter layer can achieves faster operation than the structure thatemploys the conventional IGBT of the elliptic structure using merely thep-base layer without using p⁺-layer, and using an annular n-emitterlayer, as can be seen from the characteristics of the curves II and IV.The turn-off time of the conventional structure is indicated by a dottedarrow in FIG. 52.

FIG. 53 represents an electric current distribution, a voltagedistribution and a depletion layer region boundary during the resistanceload switching turn-off (at 10.6 μs) of the lateral IGBT of the junctionisolation structure according to the first embodiment already described.The current distribution is represented by solid lines, the voltagedistribution is represented by broken lines, and the depletion layerregion boundary is represented by alternate long and short dash line.

In the lateral IGBT of the junction isolation structure, as shown inFIG. 53, the depletion layer expanding from the emitter side distributestoward the collector side (to a region neighboring to p-type collectorlayer 2), and further into p-type substrate 10. Therefore, the potentialdistribution represented by broken lines and the current distributionrepresented by solid lines are both present within p-type substrate 10.Therefore, the depletioning (making depletion) on the collector side issuppressed, and collector-emitter voltage VCE rises relatively slowly.As a result, decrease of collector-emitter current ICE becomesrelatively slow during the turn-off, and accordingly fall time tfbecomes long.

FIG. 54 represents, on the sectional structure, a hole distribution atthe resistance load switching turn-off (10.6 s) of the lateral IGBT ofthe junction isolation structure according to the first embodiment ofthe invention. In this lateral IGBT of the junction isolation structure,the depletion from the emitter side toward the collector side issuppressed as shown in FIG. 53, so that many holes are distributedwithin n⁻-layer 4 and p-type substrate 10. Since many holes aredistributed within n⁻-layer 4 and p-type substrate 10, a long time isrequired before disappearance of the holes that have been distributed inn⁻-layer 4 and p-type substrate 10, even in the structure with thep⁺-layer. Therefore, fall time tf becomes long.

FIG. 55 represents a hole distribution, an electron distribution and ahole/electron concentration distribution at an equilibrium state in theresistance load switching turn-off (at 10.6 μs) of the lateral IGBT ofthe junction isolation structure, and represents a distribution ofrespective carriers from the collector side to the emitter side at acertain depth in n⁻-layer 4. In FIG. 55, a curve V represents thedistribution of holes, a curve VI represents the distribution ofelectrons and a curve VII represents the electron/hole concentrationprofile in the equilibrium state.

In the lateral IGBT of the junction isolation structure, as shown inFIG. 53, the depletioning from the emitter side toward the collectorside is suppressed. Therefore, in the n⁻-layer where the depletion layeris not spread, excessive holes and excessive electrons are distributedat concentrations higher than those in the equilibrium state. Therefore,these excessive holes and excessive electrons are distributed a largeramount in the n⁻-layer, which increases the time required before theseexcessive holes and electrons disappear. Therefore, fall time tf can bereduced only to a limited extent.

FIG. 56 represents a potential distribution, a current distribution anda depletion layer region boundary at the resistance load switchingturn-off (at 10.6 μs) of the lateral IGBT of the dielectric isolationstructure, and corresponds to the sectional view of FIG. 51. In FIG. 56,solid lines represent the current distribution, the broken linesrepresent the potential distribution and the alternate long and shortdash line represents the depletion layer region boundary.

In the lateral IGBT of the dielectric isolation structure, as shown inFIG. 56, embedded insulating film 310 is present between n⁻-layer 4 andp-type substrate 300. In the embedded insulating film 310, therefore,the potential distribution is present parallel to the surface ofembedded insulating film 310, but the depletion layer extending from theemitter side is not spread into p-type substrate 300, and is spread inn⁻-layer 4 toward the collector side (the insulating film originallycorresponds to the depletion layer region). Therefore, the currentdistribution represented by solid lines and the potential distributionrepresented by broken lines are not present in p-type substrate 300.Therefore, the depletion expands toward the collector, and thereby thecollector-emitter voltage rapidly rises so that correspondingcollector-emitter current ICE rapidly rises, and fall time tf becomesshort.

FIG. 57 represents a distribution (represented by solid lines) of holesat the resistance load switching turn-off (at 10.6 μs) of the lateralIGBT of the dielectric isolation structure. The cross sectionalstructure corresponds to the cross sectional structure shown in FIG. 51.In the lateral IGBT of the dielectric isolation structure, as shown inFIG. 57, the depletioning from the emitter side toward the collectorside is promoted as represented in FIG. 56 so that only a small numberof holes are distributed in n⁻-layer 4. Therefore, only a short time isrequired before the holes distributed in n⁻-layer 4 disappear, and falltime tf becomes short.

FIG. 58 shows a hole distribution, an electron distribution and ahole/electron concentration distribution at an equilibrium state at thetime of the resistance load switching turn-off (at 10.6 μs) of thelateral IGBT of the dielectric isolation structure. The abscissa axisgives a distance, and the ordinate axis gives a concentration. FIG. 58represents the respective distributions from the collector side to theemitter side at a certain depth in n⁻-layer 4. A curve X represents thedistribution of holes, a curve XI represents the distribution ofelectrons and a curve XII represents the electron/hole concentrationdistribution at the equilibrium state.

In the lateral IGBT of the dielectric isolation structure, as shown inFIG. 56, since the depletionizing from the emitter side toward thecollector side is promoted, the region where the depletion layer is notspread is small in n⁻-layer 4. As shown in FIG. 58, therefore, n⁻-layer4 contains only small amounts of holes and/or electrons (excessive holesand/or excessive electrons) of which concentrations exceed theconcentrations at the equilibrium state. Thus, the quantities of theexcessive holes and excessive electrons are small in n⁻-layer 4,resulting in reduced time required before the excessive holes andexcessive electrons disappear. Accordingly, fall time tf can be short.

By using the dielectric isolation structure according to the seventhembodiment of the invention, therefore, it is possible to achieve thereduction of fall time tf in addition to the effect of improving thecharacteristics of collector-emitter current ICE in the IGBT and MOSFETalready described in connection with the first embodiment and others.

The dielectric isolation structure according to the seventh embodimentcan be applied to the lateral MOS device in the fifth embodiment alreadydescribed, and also can be applied to the p-channel IGBT and thep-channel lateral MOSFET. As for the structure of the lateral MOSFET,the present embodiment can be likewise applied to the lateral MOSFET ofthe trench gate structure.

According to the seventh embodiment of the invention, as describedabove, the transistor element is formed into the dielectric isolationstructure, and can achieve the effect of reducing the fall time andachieving the fast switching operation in addition to the effects of thefirst to sixth embodiments already described.

The invention can be applied to power switching elements that performpower conversion and/or power control. The invention may be solelyemployed as a power transistor, or may be integrated as an intelligentpower device with a controller or the like.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spiritand scope of the present invention being limited only by the terms ofthe appended claims.

1. A semiconductor device comprising: a semiconductor substrate; asemiconductor region formed on a surface of said semiconductorsubstrate; a first semiconductor layer region arranged on a surface ofsaid semiconductor region and coupled to a first electrode; a secondsemiconductor layer region of a ring-shaped form arranged at saidsemiconductor region, spaced from said first semiconductor layer region,surrounding said first semiconductor layer region and being different inconductivity type from said semiconductor region; a third semiconductorlayer region arranged in said second semiconductor layer region anddifferent in conductivity type from said second semiconductor layerregion, said third semiconductor layer region including a main bodyhaving a ring-shaped form and a plurality of convex portions formed,adjacent to said main body, extending away from said first semiconductorlayer region and coupled to a second electrode, the convex portionsarranged at predetermined intervals and each having a width smaller thanthe predetermined intervals; a heavily doped semiconductor layerarranged, in said second semiconductor layer region, at least below saidthird semiconductor layer region, doped more heavily than said secondsemiconductor layer region and being the same in conductivity type asthe second semiconductor layer region; and a gate electrode layerforming a channel at a surface of said second semiconductor layer regionfor transferring charges between the first and third semiconductor layerregions.
 2. The semiconductor device according to claim 1, wherein saidheavily doped semiconductor layer is deeper than said secondsemiconductor layer region.
 3. The semiconductor device according toclaim 1, wherein the heavily doped semiconductor layer is arranged in aring-shaped form, and an outer periphery of the heavily dopedsemiconductor layer is aligned to a tip end of one of the plurality ofconvex portions.
 4. The semiconductor device according to claim 1,wherein the heavily doped semiconductor layer has substantially a samesize as the third semiconductor layer region.